SINTERING AND ELECTRICAL-PROPERTIES OF TITANIA-CONTAINING AND ZIRCONIA-CONTAINING IN2O3-SNO2 (ITO) CERAMICS

被引：93

作者：

NADAUD, N

NANOT, M

BOCH, P

机构：

[1] Ceramics laboratory, Ecole Supérieure de Physique et de Chimie Industrielles, Paris

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1994年 / 77卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1994.tb05376.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The deposition rate and film quality of In2O3-SnO2 (ITO) transparent electrodes processed by sputtering are improved when using dense sputtering targets. Unfortunately, ITO ceramics do not sinter easily. It is shown that addition of TiO2 (<1 wt%) to ITO greatly increases densification without degrading electrical properties of sputtered films. The influence of ZrO2 and SiO2 was also investigated.

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页码：843 / 846

页数：4

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