EPITAXIAL-GROWTH OF ALPHA-FE FILM ON SI(111) SUBSTRATE BY LOW-ENERGY DIRECT ION-BEAM DEPOSITION

Fe film growth on Si(111) substrate was carried out by low-energy direct ion beam deposition. Fe films of about 1000 angstrom thick were grown at Fe+ ion energies of 10 eV, 20 eV, 50 eV and 100 eV without removing the native oxide layer on the Si substrate. Single-crystal alpha-Fe(111) films were obtained at 20 eV, 50 eV and 100 eV at room temperature, while (110)-preferred-oriented alpha-Fe film was obtained at 10 eV. Cross-sectional high-resolution transmission electron microscopy (TEM) studies show that the removal of the native oxide layers on the Si substrates by Fe+ ion irradiation results in the epitaxial ordering of the alpha-Fe films when the films are grown at 20 eV, 50 eV and 100 eV.