WET ETCHING OF GOLD-FILMS COMPATIBLE WITH HIGH-TC SUPERCONDUCTING THIN-FILMS

被引：43

作者：

EIDELLOTH, W

SANDSTROM, RL

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a wet etch process for selective patterning or removing gold (Au) layers on top of high T(c) YBa2Cu3O7 (YBCO) thin-film structures. As an etchant for Au, an aqueous solution of potassium iodide (KI) and iodide (I) was chosen. This etchant does not degrade YBCO or any commonly used substrate materials (SrTiO3, MgO, zirconia, and NdGaO3). This KI and I solution gives convenient etch rates of 200-300 angstrom/min and easily stops on the YBCO due to its high selectivity. Using this wet chemical etching process, we have fabricated structures with better than 1-mu-m resolution. We have found this etchant to be very useful for secondary electron microscopy analysis of high T(c) device structures.

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页码：1632 / 1634

页数：3

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