INFLUENCE OF POWER-SOURCE FREQUENCY ON THE PROPERTIES OF GD A-SI-H

被引:21
作者
MATSUDA, A
KAGA, T
TANAKA, H
TANAKA, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词
D O I
10.1143/JJAP.23.L567
中图分类号
O59 [应用物理学];
学科分类号
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页码:L567 / L569
页数:3
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共 10 条
[1]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[2]   AN AMORPHOUS SI HIGH-SPEED LINEAR IMAGE SENSOR [J].
HAMANO, T ;
ITO, H ;
NAKAMURA, T ;
OZAWA, T ;
FUSE, M ;
TAKENOUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :245-249
[3]   PREPARATION AND CHARACTERIZATION OF REACTIVELY-SPUTTERED AMORPHOUS SI - H FILMS [J].
IIZIMA, S ;
OKUSHI, H ;
MATSUDA, A ;
YAMASAKI, S ;
NAKAGAWA, K ;
MATSUMURA, M ;
TANAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :521-526
[4]  
Knights J. C., 1979, JPN J APPL PHYS, V18, P101
[5]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[7]   PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].
MATSUDA, A ;
TANAKA, K .
THIN SOLID FILMS, 1982, 92 (1-2) :171-187
[8]   EFFECT OF DEPOSITION CONDITIONS ON INTRINSIC STRESS IN A-SI-H FILMS [J].
OZAWA, K ;
TAKAGI, N ;
ASAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :767-770
[9]   A-SI THIN-FILM AS A PHOTO-RECEPTOR FOR ELECTROPHOTOGRAPHY [J].
SHIMIZU, I ;
KOMATSU, T ;
SAITO, K ;
INOUE, E .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :773-778
[10]   OPTICAL, ELECTRICAL AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON [J].
TANAKA, K ;
NAKAGAWA, K ;
MATSUDA, A ;
MATSUMURA, M ;
YAMAMOTO, H ;
YAMASAKI, S ;
OKUSHI, H ;
IIZIMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :267-273