A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY

被引:36
作者
ROCKETT, A
BARNETT, SA
GREENE, JE
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词
D O I
10.1116/1.582814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
19
引用
收藏
页码:306 / 313
页数:8
相关论文
共 19 条
[1]   ADSORPTION OF ZN ON GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1973, 38 (02) :394-412
[2]   ION-BEAM DIVERGENCE CHARACTERISTICS OF 2-GRID ACCELERATOR SYSTEMS [J].
ASTON, G ;
KAUFMAN, HR ;
WILBUR, PJ .
AIAA JOURNAL, 1978, 16 (05) :516-524
[3]   MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].
BAJOR, G ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1579-1582
[4]   MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS [J].
BARNETT, SA ;
GREENE, JE .
SURFACE SCIENCE, 1983, 128 (2-3) :401-416
[5]   LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE [J].
BEAN, JC ;
DINGLE, R .
APPLIED PHYSICS LETTERS, 1979, 35 (12) :925-927
[6]  
CHILD CD, 1914, PHYS REV, V32, P1257
[7]  
DUSHMAN S, 1962, SCI F VACUUM TECHNIQ
[8]   INTENSE ION-BEAMS [J].
GREEN, TS .
REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (10) :1257-+
[9]   ION-BEAM OXIDATION [J].
HARPER, JME ;
HEIBLUM, M ;
SPEIDELL, JL ;
CUOMO, JJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4118-4121
[10]  
HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554