PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY

被引：37

作者：

CHANG, RPH ^{[1
]}

CHANG, CC ^{[1
]}

SHENG, TT ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.89275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：657 / 659

页数：3

共 8 条

[1] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].

CHANG, CC .

[2]

CHANG CC, UNPUBLISHED

[3]

CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[4] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

CHANG, RPH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280

[6]

NAKASHIMA H, 1976 P DEV RES C SAL

[7] FACTORS AFFECTING GROWTH RATE OF PLASMA ANODIZED AL203 [J].

OHANLON, JF .

[8]

SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447