A DLTS STUDY OF THE EFFECTS OF BORON COUNTERDOPING ON THE GAP STATES IN NORMAL-TYPE HYDROGENATED AMORPHOUS-SILICON

被引：7

作者：

CULLEN, P

HARBISON, JP

LANG, DV

ADLER, D

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 11期

关键词：

D O I：

10.1016/0038-1098(84)90272-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：991 / 994

页数：4

共 12 条

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[8] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

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[9] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

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