2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES

被引：22
作者：
FU, JS
AXNESS, CL
WEAVER, HT
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期
关键词：
D O I：
10.1109/TNS.1984.4333474
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1155 / 1160
页数：6
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共 12 条
  • [1] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES
    HSIEH, CM
    MURLEY, PC
    OBRIEN, RR
    [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 103 - 105
  • [2] HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190
  • [3] HU C, 1982, IEEE ELECTRON DEVICE, V3, P31
  • [4] CHARGE COLLECTION IN MULTILAYER STRUCTURES
    KNUDSON, AR
    CAMPBELL, AB
    SHAPIRO, P
    STAPOR, WJ
    WOLICKI, EA
    PETERSEN, EL
    DIEHLNAGLE, SE
    HAUSER, J
    DRESSENDORFER, PV
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1149 - 1154
  • [5] MAY TC, 1979, IEEE T ELECTRON DEVI, V26
  • [6] COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS
    MESSENGER, GC
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2024 - 2031
  • [7] 2K X 8 BIT HI-CMOS STATIC RAMS
    MINATO, O
    MASUHARA, T
    SASAKI, T
    NAKAMURA, H
    SAKAI, Y
    YASUI, T
    UCHIBORI, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1591 - 1595
  • [8] MOCK MS, 1981, NUMERICAL ANAL SEMIC
  • [9] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON
    OLDHAM, TR
    MCLEAN, FB
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4493 - 4500
  • [10] AN N-WELL CMOS DYNAMIC RAM
    SHIMOHIGASHI, K
    MASUDA, H
    KAMIGAKI, Y
    ITOH, K
    HASHIMOTO, N
    ARAI, E
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 714 - 718
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