METHOD OF TUNGSTEN DOPANT DEPOSITION FOR DUAL-DIELECTRIC CHARGE-STORAGE CELLS

被引：5

作者：

LIGENZA, JR ^{[1
]}

KAHNG, D ^{[1
]}

LEPSELTER, MP ^{[1
]}

LABATE, E ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 05期

关键词：

D O I：

10.1109/T-ED.1977.18782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / 583

页数：3

共 8 条

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[2] The beam shaping in the molecular flow. [J].

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[3] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS [J].

KAHNG, D ;

SUNDBURG, WJ ;

BOULIN, DM ;

LIGENZA, JR .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09) :1723-1739

[4]

KOFSTAD P, 1966, HIGH TEMPERATURE OXI, P254

[5]

MARGRAVE JL, 1967, CHARACTERIZATION HIG, P497

[6] MASS-SPECTROMETRIC STUDY OF OXIDATION OF TUNGSTEN [J].

SCHISSEL, PO ;

TRULSON, OC .

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[7]

ZUBER EG, 1970, J PHYS CHEM, V74, P2479

[8]

1974, HDB CHEMISTRY PHYSIC, pE226

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