IMPURITY-STIMULATED CRYSTALLIZATION AND DIFFUSION IN AMORPHOUS-SILICON

被引：57

作者：

NYGREN, E

POGANY, AP

SHORT, KT

WILLIAMS, JS

ELLIMAN, RG

POATE, JM

机构：

[1] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.99436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：439 / 441

页数：3

共 15 条

[1] THERMOMIGRATION OF GOLD-RICH DROPLETS IN SILICON [J].

ANTHONY, TR ;

CLINE, HE .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2473-&

[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

CAMPISANO, SU ;

RIMINI, E ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172

[3]

DONOVAN EP, 1984, THESIS HARVARD U

[4] DIFFUSION AND PRECIPITATION IN AMORPHOUS SI [J].

ELLIMAN, RG ;

GIBSON, JM ;

JACOBSON, DC ;

POATE, JM ;

WILLIAMS, JS .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :478-480

[5]

ELLIMAN RG, 1983, NUCL INSTRUM METHODS, V210, P663

[6]

ELLIMAN RG, 1986, MATER RES SOC S P, V51, P389

[7]

NYGREN E, 1987, MATER RES SOC S P, V74, P307

[8]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

[9] Formation of stable dopant interstitials during ion implantation of silicon [J].

Pennycook, S. J. ;

Culbertson, R. J. ;

Narayan, J. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) :476-492

[10]

Poate J. M., 1984, Ion implantation and beam processing, P13

← 1 2 →