ORDERING AT SI(111)/A-SI AND SI(111)/SIO2 INTERFACES

被引：98

作者：

ROBINSON, IK ^{[1
]}

WASKIEWICZ, WK ^{[1
]}

TUNG, RT ^{[1
]}

BOHR, J ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB, UPTON, NY 11973 USA

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.57.2714

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2714 / 2717

页数：4

共 20 条

[1] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].

ANDREWS, SR ;

COWLEY, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35) :6427-6439

[2] STACKING-FAULT MODEL FOR THE SI(111)-(7X7) SURFACE [J].

BENNETT, PA ;

FELDMAN, LC ;

KUK, Y ;

MCRAE, EG ;

ROWE, JE .

PHYSICAL REVIEW B, 1983, 28 (06) :3656-3659

[3] MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION [J].

BOHR, J ;

FEIDENHANSL, R ;

NIELSEN, M ;

TONEY, M ;

JOHNSON, RL ;

ROBINSON, IK .

PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1275-1278

[4] ANGLE CALCULATIONS FOR 3- AND 4- CIRCLE X-RAY AND NEUTRON DIFFRACTOMETERS [J].

BUSING, WR ;

LEVY, HA .

ACTA CRYSTALLOGRAPHICA, 1967, 22 :457-&

[5] ROTATIONAL TRANSITION OF INCOMMENSURATE KR MONOLAYERS ON GRAPHITE [J].

DAMICO, KL ;

MONCTON, DE ;

SPECHT, ED ;

BIRGENEAU, RJ ;

NAGLER, SE ;

HORN, PM .

PHYSICAL REVIEW LETTERS, 1984, 53 (23) :2250-2253

[6] MEASUREMENT OF THE SILICON (111) SURFACE CONTRACTION [J].

DURBIN, SM ;

BERMAN, LE ;

BATTERMAN, BW ;

BLAKELY, JM .

PHYSICAL REVIEW LETTERS, 1986, 56 (03) :236-239

[7] X-RAY-DIFFRACTION STUDY OF THE GE(001) RECONSTRUCTED SURFACE [J].

EISENBERGER, P ;

MARRA, WC .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1081-1084

[8] PRESERVATION OF A 7 X 7 PERIODICITY AT A BURIED AMORPHOUS-SI/SI(111) INTERFACE [J].

GIBSON, JM ;

GOSSMANN, HJ ;

BEAN, JC ;

TUNG, RT ;

FELDMAN, LC .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :355-358

[9] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J].

HAHN, PO ;

HENZLER, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4122-4127

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

← 1 2 →