CURRENT LINES AND ACCURATE CONTACT CURRENT EVALUATION IN 2-D NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES

被引:17
作者
PALM, E [1 ]
VANDEWIELE, F [1 ]
机构
[1] CATHOLIC UNIV LOUVAIN,MICROELECTR LAB,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
关键词
D O I
10.1109/T-ED.1985.22238
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2052 / 2059
页数:8
相关论文
共 10 条
[1]  
GREENFIELD JA, 1982, ANAL NONPLANAR DEVIC
[2]   2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
MOCK, MS .
SOLID-STATE ELECTRONICS, 1973, 16 (05) :601-609
[3]   ONE-DIMENSIONAL ANALYSIS OF TURNOFF PHENOMENA FOR A GATE TURNOFF THYRISTOR [J].
NAITO, M ;
NAGANO, T ;
FUKUI, H ;
TERASAWA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :226-231
[4]  
PALM E, 1984, SIMULATION SEMICONDU, P1
[5]  
PALM E, 1982, ANAL BIDIMENSIONNELL
[6]  
PALM E, 1983, P NASECODE 3 C, P214
[7]  
PALM E, UNPUB
[8]   NUMERICAL-SIMULATION OF TRANSIENT PROCESSES IN 2-D BIPOLAR-TRANSISTORS [J].
POLSKY, BS ;
RIMSHANS, JS .
SOLID-STATE ELECTRONICS, 1981, 24 (12) :1081-1085
[9]   LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].
SCHARFETTER, DL ;
GUMMEL, HK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+
[10]  
VARGA RS, 1962, MATRIX ITERATIVE ANA, P181