BILEVEL POLYSILOXANE RESIST FOR ION-BEAM AND ELECTRON-BEAM LITHOGRAPHY

[1] SENSITIVITY AND CONTRAST OF SOME PROTON-BEAM RESISTS [J]. POLYMER ENGINEERING AND SCIENCE, 1980, 20 (16) : 1064 - 1068

[2] PREPARATION + CHARACTERIZATION OF LOWER EQUILIBRATED PHENYLSILSESQUIOXANES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1964, 86 (06) : 1120 - &

[3] DUBOIS JC, 1972, 5TH INT C EL ION BEA, P112

[4] LEVISETTI R, 1984, P SOC PHOTO-OPT INST, V471, P75, DOI 10.1117/12.942327

[5] LIN BJ, 1983, INTRO MICROLITHOGRAP, P187

[6] MORITA M, 1983, JAP J APPL PHYS, V22, P1659

[7] PREPARATION AND PROPERTIES OF A POLYSILOXANE ELECTRON RESIST [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1716 - 1721

[8] ROBERTS ED, 1968, J ELECTROCHEM SOC, P571

[9] Rosilio C., 1983, Microelectronic Engineering, V1, P197, DOI 10.1016/0167-9317(83)90003-5

[10] SHAW J, 1982, REGIONAL TECHNICAL C, P295

[1] SENSITIVITY AND CONTRAST OF SOME PROTON-BEAM RESISTS [J]. POLYMER ENGINEERING AND SCIENCE, 1980, 20 (16) : 1064 - 1068

[2] PREPARATION + CHARACTERIZATION OF LOWER EQUILIBRATED PHENYLSILSESQUIOXANES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1964, 86 (06) : 1120 - &

[3] DUBOIS JC, 1972, 5TH INT C EL ION BEA, P112

[4] LEVISETTI R, 1984, P SOC PHOTO-OPT INST, V471, P75, DOI 10.1117/12.942327

[5] LIN BJ, 1983, INTRO MICROLITHOGRAP, P187

[6] MORITA M, 1983, JAP J APPL PHYS, V22, P1659

[7] PREPARATION AND PROPERTIES OF A POLYSILOXANE ELECTRON RESIST [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1716 - 1721

[8] ROBERTS ED, 1968, J ELECTROCHEM SOC, P571

[9] Rosilio C., 1983, Microelectronic Engineering, V1, P197, DOI 10.1016/0167-9317(83)90003-5

[10] SHAW J, 1982, REGIONAL TECHNICAL C, P295