LAMBDA/4-SHIFTED INGAASP INP DFB LASERS BY SIMULTANEOUS HOLOGRAPHIC EXPOSURE OF POSITIVE AND NEGATIVE PHOTORESISTS

被引：72
作者：
UTAKA, K
AKIBA, S
SAKAI, K
MATSUSHIMA, Y
机构：
[1] KDD, Research & Development Lab,, Tokyo, Jpn, KDD, Research & Development Lab, Tokyo, Jpn
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 24期
关键词：
D O I：
10.1049/el:19840686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LASERS, SEMICONDUCTOR
引用
收藏
页码：1008 / 1010
页数：3
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