A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS

被引：117
|
作者：
GALLOWAY, KF [1 ]
GAITAN, M [1 ]
RUSSELL, TJ [1 ]
机构：
[1] NBS,DIV SEMICOND DEVICES & CIRCUITS,GAITHERSBURG,MD 20899
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期
关键词：
D O I：
10.1109/TNS.1984.4333537
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1497 / 1501
页数：5
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