HIGHLY UNIFORM GAAS/ALGAAS GRIN-SCH SQW DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:8
|
作者
WANG, CA
CHOI, HK
CONNORS, MK
机构
关键词
D O I
10.1109/68.43378
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:351 / 353
页数:3
相关论文
共 50 条
  • [1] GRIN SCH SQW AlGaAs/GaAs lasers grown by molecular beam epitaxy: Modeling and operating characteristics
    Bugajski, M
    Kaniewska, M
    Reginski, K
    Malag, A
    Lepkowski, S
    Muszalski, J
    LASER TECHNOLOGY V: PHYSICS AND RESEARCH AND DEVELOPMENT TRENDS, 1997, 3186 : 310 - 323
  • [2] OPTIMIZED GROWTH OF GRIN-SCH QUANTUM WELL LASERS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
    SCHAUS, CF
    SHEALY, JR
    EASTMAN, LF
    JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 37 - 42
  • [3] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS
    CHINN, SR
    ZORY, PS
    REISINGER, AR
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) : 2191 - 2214
  • [4] Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD
    Lu, LW
    Feng, SL
    Xu, JY
    Yang, H
    Wang, ZG
    Wang, J
    Wang, Y
    Ge, WK
    JOURNAL OF CRYSTAL GROWTH, 1996, 169 (04) : 643 - 648
  • [5] LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    CHOI, HK
    LEE, JW
    SALERNO, JP
    CONNORS, MK
    TSAUR, BY
    FAN, JCC
    APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1114 - 1115
  • [6] ALGAAS/GAAS HBTS GROWN ON INP BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HOBSON, WS
    REN, F
    PEARTON, SJ
    FULLOWAN, TR
    LASKOWSKI, EJ
    CHEN, YK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) : 595 - 597
  • [7] 3.06 MU-M INGAASSB/INPSB DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    MENNA, RJ
    CAPEWELL, DR
    MARTINELLI, RU
    YORK, PK
    ENSTROM, RE
    APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2127 - 2129
  • [8] FABRICATION OF A GAAS-ALGAAS GRIN-SCH SQW LASER DIODE ON SILICON BY EPITAXIAL LIFT-OFF
    POLLENTIER, I
    BUYDENS, L
    VANDAELE, P
    DEMEESTER, P
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) : 115 - 117
  • [9] Low threshold room temperature AlGaAs/GaAs GRIN SCH SQW lasers grown by MBE
    Kaniewska, M
    Reginski, K
    Muszalski, J
    Krynska, D
    Litkowiec, A
    Kaniewski, J
    Wesolowski, M
    Bugajski, M
    ACTA PHYSICA POLONICA A, 1996, 90 (04) : 847 - 850