共 50 条
- [42] Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 449 - 453
- [44] Photoluminescence characterization of 1.3μm In(Ga)As/GaAs islands grown by molecular beam epitaxy PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 165 - 167
- [46] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
- [50] Defects in metalorganic chemical vapor deposition epitaxy-grown ZnSe films on GaAs investigated by monoenergetic positrons Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (10): : 2442 - 2448