DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME

被引：8

作者：

CHANTRE, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

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D O I：

10.1051/jphyscol:1983542

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学科分类号：

摘要：

引用

页码：269 / 280

页数：12

共 28 条

[1]

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[3]

CHANTRE A, 1983, DEFECTS SEMICONDUCTO

[4]

CHANTRE A, 1983, UNPUB APPL PHYS LETT

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CHANTRE A, 1982, UNPUB DEFECTS SEMICO

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[8]

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[9] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

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[10]

Gonchond J. P., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P189

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