VOLTAGE-DEPENDENT SCANNING TUNNELING MICROSCOPY IMAGING OF SEMICONDUCTOR SURFACES

被引：113

作者：

STROSCIO, JA ^{[1
]}

FEENSTRA, RM ^{[1
]}

NEWNS, DM ^{[1
]}

FEIN, AP ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.575368

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：499 / 507

页数：9

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