INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：56

作者：

NOREIKA, AJ ^{[1
]}

TAKEI, WJ ^{[1
]}

FRANCOMBE, MH ^{[1
]}

WOOD, CEC ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4932 / 4937

页数：6

共 9 条

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[8] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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