TUNGSTEN SILICIDE SCHOTTKY CONTACTS ON GAAS

被引：19
|
作者：
ZHU, Z
CHEUNG, NW
LEMNIOS, ZJ
STRATHMAN, MD
STIMMELL, JB
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] NATL SEMICOND CORP,SANTA CLARA,CA 95051
[3] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80908
[4] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期
关键词：
D O I：
10.1116/1.583464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1398 / 1403
页数：6
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