THEORETICAL INVESTIGATION OF THE PRESSURE DEPENDENCES OF ENERGY GAPS IN INAS AND INSB

被引：13

作者：

BOUARISSA, N ^{[1
]}

AOURAG, H ^{[1
]}

机构：

[1] UNIV SIDI BEL ABBES,DEPT PHYS,COMPUTAT MAT SCI LAB,SIDI BEL ABBES,ALGERIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 33卷 / 2-3期

关键词：

BOND STRUCTURE CALCULATIONS; SEMICONDUCTORS; ELECTRON STATES; PHASE TRANSITIONS;

D O I：

10.1016/0921-5107(94)01181-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The observed dependences on pressure of the energy gaps in InAs and InSb at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states.

引用

页码：122 / 132

页数：11

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