STRAIN RELIEF DURING GROWTH - CAF2 ON SI(111)

被引：18
|
作者：
TROMP, RM
LEGOUES, FK
REUTER, MC
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.74.2706
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The growth of thin CaF2 films on Si(111) was studied with in situ low energy electron microscopy and transmission electron microscopy. As the strained epitaxial film passes through the critical thickness, initial dislocations form in triplets ("trigons"). These serve as sources for full edge dislocations which subsequently form a dense network. This unusual dislocation structure provides a natural explanation for a recently proposed "two-dimensional structure modulation" of the Si(111)/CaF2 interface. © 1995 The American Physical Society.
引用
收藏
页码：2706 / 2709
页数：4
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