共 50 条
[31]
THE PHOTOLUMINESCENCE SPECTRA OF THIN SI-DOPED GAAS-LAYERS GROWN BY MBE
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1990, 118 (02)
:567-576
[32]
Photoluminescence dark spot dynamics in GaAs grown on Si
[J].
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,
1994, 33 (1 B)
:864-868
[33]
Photoluminescence and photoluminescence excitation spectra of AlAs/GaAs disordered superlattices with various disordered lengths
[J].
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap,
5 A (2566-2572)
[34]
Photoluminescence and photoluminescence excitation spectra of AlAs/GaAs disordered superlattices with various disordered lengths
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (5A)
:2566-2572
[35]
PHOTOLUMINESCENCE DARK SPOT DYNAMICS IN GAAS GROWN ON SI
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (1B)
:864-868
[37]
METHOD FOR DETERMINATION OF BULK AND SURFACE RECOMBINATION PARAMETERS FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1976, 10 (10)
:1140-1142
[38]
TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE EXCITATION-SPECTRA IN CD1-XMNXTE
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1986, 133 (01)
:K45-K48