共 12 条
[1]
GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1984, 23 (11)
:L843-L845
[8]
SHASTRY SK, UNPUB
[9]
OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
[J].
PHYSICAL REVIEW,
1962, 127 (03)
:768-+
[10]
MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI
[J].
APPLIED PHYSICS LETTERS,
1984, 45 (05)
:535-536