PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GAAS GROWN DIRECTLY ON SI

被引:97
作者
ZEMON, S
SHASTRY, SK
NORRIS, P
JAGANNATH, C
LAMBERT, G
机构
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D O I
10.1016/0038-1098(86)90031-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:457 / 460
页数:4
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共 12 条
[1]   GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].
AKIYAMA, M ;
KAWARADA, Y ;
KAMINISHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845
[2]   ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J].
CASEY, HC ;
KAISER, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :149-+
[3]   GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].
FISCHER, R ;
MASSELINK, WT ;
KLEM, J ;
HENDERSON, T ;
MCGLINN, TC ;
KLEIN, MV ;
MORKOC, H ;
MAZUR, JH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381
[4]   ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS - GE PREPARED BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
ETTENBERG, M .
APPLIED PHYSICS LETTERS, 1973, 23 (09) :511-513
[5]   OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].
MASSELINK, WT ;
HENDERSON, T ;
KLEM, J ;
FISCHER, R ;
PEARAH, P ;
MORKOC, H ;
HAFICH, M ;
WANG, PD ;
ROBINSON, GY .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311
[6]   METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
METZE, GM ;
CHOI, HK ;
TSAUR, BY .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109
[7]   STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].
OSBOURN, GC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589
[8]  
SHASTRY SK, UNPUB
[9]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
STURGE, MD .
PHYSICAL REVIEW, 1962, 127 (03) :768-+
[10]   MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].
TSAUR, BY ;
METZE, GM .
APPLIED PHYSICS LETTERS, 1984, 45 (05) :535-536