POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS

被引：91

作者：

HAWKINS, WG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1109/T-ED.1986.22515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：477 / 481

页数：5

共 17 条

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[7]

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[9]

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[10] INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (04) :420-422

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