CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN TRANSIENT CAPACITANCE AND CONDUCTANCE TECHNIQUES

被引：24
作者：
VUILLAUME, D
BOURGOIN, JC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期
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D O I：
10.1063/1.335969
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2077 / 2079
页数：3
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共 22 条
[1]   RAPID INTERFACE PARAMETERIZATION USING A SINGLE MOS CONDUCTANCE CURVE [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1983, 26 (08) :711-716
[2]  
COOPER JA, 1974, SOLID STATE ELECTRON, V1, P641
[3]   MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J].
DECLERCK, G ;
VANOVERS.R ;
BROUX, G .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1451-1460
[4]   INTERFACE STATES IN SI-SIO2 INTERFACES [J].
DEULING, H ;
KLAUSMANN, E ;
GOETZBERGER, A .
SOLID-STATE ELECTRONICS, 1972, 15 (05) :559-+
[5]   ENERGY CONCEPTS OF INSULATOR SEMICONDUCTOR INTERFACE TRAPS [J].
ENGSTROM, O ;
ALM, A .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5240-5244
[6]   MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
JOHNSON, NM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :303-314
[7]   CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J].
JOHNSON, NM ;
BIEGELSEN, DK ;
MOYER, MD ;
CHANG, ST ;
POINDEXTER, EH ;
CAPLAN, PJ .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :563-565
[8]  
JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421
[9]   MEASUREMENT OF SURFACE-STATE DISTRIBUTIONS IN MOS DIODES WITH A SIMPLE DLTS SYSTEM [J].
KATSUBE, T ;
KAKIMOTO, K ;
HARA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2307-2308
[10]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
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