UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS

被引：44

作者：

CALLEGARI, A

PAN, ETS

MURAKAMI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1141 / 1143

页数：3

共 12 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

THIN SOLID FILMS, 1983, 104 (3-4) :391-397

[3] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[4]

HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[5] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

KONIG, U ;

KOHN, E ;

WORTMANN, A .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :835-&

[6] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS [J].

HENRY, HG ;

DAWSON, DE ;

LEMNIOS, ZJ ;

KIM, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1100-1103

[7]

ILLIADIS A, 1984, SOLID STATE COMMUN, V49, P99

[8] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].

KUAN, TS ;

BATSON, PE ;

JACKSON, TN ;

RUPPRECHT, H ;

WILKIE, EL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957

[9]

MURAKAMI M, UNPUB

[10] ELEVATED-TEMPERATURE LOW-ENERGY ION CLEANING OF GAAS [J].

OELHAFEN, P ;

FREEOUF, JL ;

PETTIT, GD ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :787-790

← 1 2 →