INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-DELTA THIN-FILMS ON SI WITH CONDUCTING INDIUM-TIN-OXIDE BUFFER LAYERS

被引：26
作者：
KELLETT, BJ
JAMES, JH
GAUZZI, A
DWIR, B
PAVUNA, D
REINHART, FK
机构：
[1] Institute of Micro and Optoelectronics, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期
关键词：
D O I：
10.1063/1.104221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Superconducting YBa2Cu3O7-δ (YBCO) thin films have been grown in situ on Si with conducting indium-tin-oxide (ITO) buffer layers. ITO allows YBCO to be electrically connected to the underlying Si substrate. Both the YBCO film and ITO buffer layer, grown by ion beam sputtering, are textured and polycrystalline with a combined room- temperature resistivity of about 2 mΩ cm. Superconducting onsets are 92 K with zero resistance at 68 K.
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页码：1146 / 1148
页数：3
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