GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD

被引：23

作者：

AKIYAMA, M

KAWARADA, Y

KAMINISHI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90394-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：39 / 43

页数：5

共 10 条

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[9] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS [J].

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