SEPARATION OF GENERATION-RECOMBINATION AND 1/F NOISE COMPONENTS IN GAAS-FETS

被引：4
作者：
FORBES, L
CANFIELD, PC
GLEASON, R
MCCAMANT, A
机构：
[1] OREGON STATE UNIV, DEPT ELECT & COMP ENGN, CORVALLIS, OR 97331 USA
[2] TEKTRONIX INC, CTR RES & DEV, BEAVERTON, OR 97077 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期
关键词：
D O I：
10.1109/T-ED.1984.21890
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1986 / 1986
页数：1
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FORBES L, 1983, I PHYS C SER, V63, P179
[4]   DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J].
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IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :9-11
[5]   LOW-FREQUENCY NOISE IN GAAS CURRENT LIMITERS [J].
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SOLID-STATE ELECTRONICS, 1983, 26 (09) :861-872
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Su C., 1983, International Electron Devices Meeting 1983. Technical Digest, P601
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