SEPARATION OF GENERATION-RECOMBINATION AND 1/F NOISE COMPONENTS IN GAAS-FETS

被引:4
作者
FORBES, L
CANFIELD, PC
GLEASON, R
MCCAMANT, A
机构
[1] OREGON STATE UNIV, DEPT ELECT & COMP ENGN, CORVALLIS, OR 97331 USA
[2] TEKTRONIX INC, CTR RES & DEV, BEAVERTON, OR 97077 USA
关键词
D O I
10.1109/T-ED.1984.21890
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1986 / 1986
页数:1
相关论文
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Su C., 1983, International Electron Devices Meeting 1983. Technical Digest, P601