THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS

被引：75

作者：

LINCHUNG, PJ

REINECKE, TL

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.27.1101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1101 / 1114

页数：14

共 47 条

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