HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS

被引：33
作者：
TAMMINGA, Y
WILLEMSEN, MFC
HABRAKEN, FHPM
KUIPER, AET
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 200卷 / 2-3期
关键词：
D O I：
10.1016/0167-5087(82)90476-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：499 / 504
页数：6
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