NONRESONANT TUNNELING IN INGAP/INALP ASYMMETRIC DOUBLE QUANTUM-WELLS

被引：8

作者：

BUCCAFUSCA, O ^{[1
]}

CHILLA, JLA ^{[1
]}

MENONI, CS ^{[1
]}

ROCCA, JJ ^{[1
]}

HAFICH, MJ ^{[1
]}

WOODS, LM ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.108942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonresonant tunneling rates have been measured in InGaP/InAlP asymmetric double quantum-well structures for which optical phonon assisted tunneling is energetically forbidden. For an initial photoexcited Carrier density of 2.4 X 10(11) CM-2, tunneling times of 220, 60, and less than 9 ps have been measured in samples with barrier thickness 4.5, 3.0, and 1.5 nm, respectively. The tunneling times were found to be strongly dependent on carrier density. The measured tunneling times and their dependence on carrier density are compatible with impurity scattering being the dominant mechanism assisting the tunneling.

引用

页码：399 / 401

页数：3

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