YELLOW EMISSION BANDS PRODUCED DURING GOLD ETCHING IN O2-CF4 RF GLOW-DISCHARGE PLASMAS - EVIDENCE FOR GAS-PHASE AUF

被引:34
|
作者
SAENGER, KL
SUN, CP
机构
来源
PHYSICAL REVIEW A | 1992年 / 46卷 / 01期
关键词
D O I
10.1103/PhysRevA.46.670
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Distinctive optical emission bands have been observed during the etching of gold films in O2-CF4 and O2-SF6 rf glow-discharge plasmas. We suggest that the emission originates from gas-phase AuF, although AuO and the molecular ions AuF+ and AuO+ cannot be definitively ruled out as the emitting species. No optical spectra have previously been reported for any of these species in the gas phase. Conditions for producing the emission bands are outlined, and a representative spectrum is provided. Band positions for the tentatively identified (upsilon' = upsilon", upsilon") and (upsilon' = upsilon" -1, upsilon") progressions could be reproduced with a (0,0) band origin nu(00) = 17 757 cm-1, vibration frequencies omega(e)' = 529.5 cm-1 and omega(e)" = 560 cm-1, and vibrational anharmonicities omega(e)'x(e)' = 2.5 cm-1 and omega(e)"x(e)" = 1.0 cm-1, where the vibrational energies relative to the upsilon = 0 levels are given by G0(upsilon) = (omega(e) - omega(e)x(e))upsilon - (omega(e)x(e))upsilon(2). The band structure could be qualitatively accounted for by a (1)PI - (1)SIGMA band system with an assumed B(e)" of 0.24 cm-1, B(e)' = B(e)" + 2.75 x 10(-3) cm-1, alpha(e)' = 4.5 x 10(-3) cm-1, and alpha(e)" = 1.0 x 10(-3) cm-1, where the rotation constants are given by B(upsilon) = B(e) - alpha(e) (upsilon + 1/2).
引用
收藏
页码:670 / 673
页数:4
相关论文
共 8 条
  • [1] DEMONSTRATION OF PLUTONIUM ETCHING IN A CF4/O2 RF GLOW-DISCHARGE
    MARTZ, JC
    HESS, DW
    HASCHKE, JM
    WARD, JW
    FLAMM, BF
    JOURNAL OF NUCLEAR MATERIALS, 1991, 182 : 277 - 280
  • [2] SILICON ETCHING IN A DIRECT-CURRENT GLOW-DISCHARGE OF CF4/O2 AND NF3/O2
    BLOM, HO
    BERG, S
    NENDER, C
    NORSTROM, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1321 - 1324
  • [3] EVIDENCE OF 2-PHASE STRUCTURE IN AMORPHOUS-SILICON OXIDES PRODUCED BY N2O+SIH4 GLOW-DISCHARGE DECOMPOSITION
    FORTUNATO, G
    DELLASALA, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 423 - 426
  • [4] GAS-SAMPLING GLOW-DISCHARGE FOR OPTICAL-EMISSION SPECTROMETRY .2. OPTIMIZATION AND EVALUATION FOR THE DETERMINATION OF NONMETALS IN GAS-PHASE SAMPLES
    PEREIRO, R
    STARN, TK
    HIEFTJE, GM
    APPLIED SPECTROSCOPY, 1995, 49 (05) : 616 - 622
  • [5] Gas-phase evolution of Ar/H2O and Ar/CH4 dielectric barrier discharge plasmas
    Ruggero Barni
    Claudia Riccardi
    The European Physical Journal D, 2018, 72
  • [6] Gas-phase evolution of Ar/H2O and Ar/CH4 dielectric barrier discharge plasmas
    Barni, Ruggero
    Riccardi, Claudia
    EUROPEAN PHYSICAL JOURNAL D, 2018, 72 (04)
  • [7] NUMERICAL INVESTIGATION OF THE KINETICS AND CHEMISTRY OF RF GLOW-DISCHARGE PLASMAS SUSTAINED IN HE, N2, O2, HE/N2/O2, HE/CF4/O2, AND SIH4/NH3 USING A MONTE-CARLO-FLUID HYBRID MODEL
    SOMMERER, TJ
    KUSHNER, MJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1654 - 1673
  • [8] Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma
    Tezani, L. L.
    Pessoa, R. S.
    Maciel, H. S.
    Petraconi, G.
    VACUUM, 2014, 106 : 64 - 68