AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON

被引：265

作者：

BACCARANI, G ^{[1
]}

WORDEMAN, MR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 04期

关键词：

D O I：

10.1016/0038-1101(85)90100-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：407 / 416

页数：10

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