GRADED-SIGE-BASE, POLY-EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：60

作者：

PATTON, GL

HARAME, DL

STORK, JMC

MEYERSON, BS

SCILLA, GJ

GANIN, E

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：534 / 536

页数：3

共 12 条

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[3]

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[4] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J].

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IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :52-54

[5] 2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION [J].

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[7] COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXY [J].

MEYERSON, BS ;

URAM, KJ ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2555-2557

[8] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

PATTON, GL ;

IYER, SS ;

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STORK, JMC .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :165-167

[9]

PATTON GL, 1989, MAY S VLSI TECHN, P95

[10]

STORK JMC, 1989, S VLSI TECHN, P1

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