METAL-SEMICONDUCTOR STRUCTURES BASED ON P-TYPE INAS

被引：0
|
作者：
ESINA, NP
ZOTOVA, NV
KARANDASHEV, SA
FILARETOVA, GM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：624 / 627
页数：4
相关论文
共 50 条
  • [41] Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors
    Song Kun
    Chai Chang-Chun
    Yang Yin-Tang
    Chen Bin
    Zhang Xian-Jun
    Ma Zhen-Yang
    CHINESE PHYSICS B, 2012, 21 (01)
  • [42] THERMAL CONDUCTIVITY CHARACTERIZATION AND MODELING OF P-TYPE METAL/SEMICONDUCTOR NANOCOMPOSITES
    Xu, Dongyan
    Feser, Joseph P.
    Zhao, Yang
    Lu, Hong
    Burke, Peter
    Gossard, Arthur C.
    Majumdar, Arun
    PROCEEDINGS OF THE ASME INTERNATIONAL HEAT TRANSFER CONFERENCE - 2010, VOL 6: MICROCHANNELS, NANO, NANOFLUIDS, SPRAY COOLING, POROUS MEDIA, 2010, : 525 - 529
  • [43] GaSb and InAs: New materials for metal-semiconductor point-contact diodes
    Carelli, G
    De Michele, A
    Finotti, M
    Bousbahi, K
    Ioli, N
    Moretti, A
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2003, 24 (05): : 799 - 811
  • [44] GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes
    G. Carelli
    A. De Michele
    M. Finotti
    K. Bousbahi
    N. Ioli
    A. Moretti
    International Journal of Infrared and Millimeter Waves, 2003, 24 : 799 - 811
  • [45] Hall and thermoelectric evaluation of p-type InAs
    Wagener, M. C.
    Wagener, V.
    Botha, J. R.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 5038 - 5041
  • [46] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON P-TYPE IN0.53GA0.47AS
    NOVAK, J
    MALACKY, L
    ELECTRONICS LETTERS, 1990, 26 (11) : 704 - 705
  • [47] Potential Superiority of p-Type Silicon-Based Metal-Oxide-Semiconductor Structures Over n-Type for Lateral Photovoltaic Effects
    Huang, Xu
    Mei, Chunlian
    Hu, Jieqiong
    Zheng, Diyuan
    Gan, Zhikai
    Zhou, Peiqi
    Wang, Hui
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 1018 - 1021
  • [48] TUNNELING IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON EPITAXIALLY GROWN P-TYPE HG1-XCDXTE
    LANG, M
    HUMENBERGER, J
    GRESSLEHNER, KH
    LISCHKA, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 954 - 958
  • [49] FIELD-EFFECT STUDIES ON P-TYPE CUINTE2 METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    DAWAR, AL
    KUMAR, A
    KUMAR, P
    MATHUR, PC
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3695 - 3698
  • [50] ELECTRON INJECTION INTO A P-TYPE SEMICONDUCTOR
    ROBERTS, GG
    PHYSICA STATUS SOLIDI, 1968, 27 (01): : 209 - &
12345