METAL-SEMICONDUCTOR STRUCTURES BASED ON P-TYPE INAS

被引：0
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作者：
ESINA, NP
ZOTOVA, NV
KARANDASHEV, SA
FILARETOVA, GM
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：624 / 627
页数：4
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