DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES

被引：37
作者：
FRITZ, IJ
DAWSON, LR
ZIPPERIAN, TE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.582563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：387 / 390
页数：4
相关论文
共 20 条
[1]   THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :382-388
[2]  
FRITZ IJ, UNPUB SOLID STATE CO
[3]  
FRITZ IJ, UNPUB 1982 P INT S G
[4]   GROWTH AND PHOTO-LUMINESCENCE CHARACTERIZATION OF A GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICE [J].
GOURLEY, PL ;
BIEFELD, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :473-475
[5]  
GOURLEY PL, UNPUB 1982 P INT S G
[6]  
HILSUM G, 1974, ELECTRON LETT, V10, P259
[7]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[8]   DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280
[9]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[10]   LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].
OLIVER, JD ;
EASTMAN, LF .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712
12