Low temperature Sn-rich Au-Sn wafer-level bonding

被引：4
|
作者：
Fang Zhiqiang [1 ,2 ]
Mao Xu [1 ,2 ]
Yang Jinling [1 ,2 ]
Yang Fuhua [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Res Ctr Engn Semicond Integrated Technol, Beijing 100083, Peoples R China
[2] State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 10期
基金：
中国国家自然科学基金;
关键词：
MEMS packaging; Au-Sn solder; Sn-rich; bonding strength;
D O I：
10.1088/1674-4926/34/10/106001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au-Sn system makes a major contribution to the high bonding shear strength. The maximum shear strength of 64 MPa and a leak rate lower than 4.9 x 10(-7) atm-cc/s have been obtained for Au46Sn54 solder bonded at 310 degrees C. This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.
引用
收藏
页数：4
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