Low temperature Sn-rich Au-Sn wafer-level bonding

被引：4

作者：

Fang Zhiqiang ^{[1
,2
]}

Mao Xu ^{[1
,2
]}

Yang Jinling ^{[1
,2
]}

Yang Fuhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Res Ctr Engn Semicond Integrated Technol, Beijing 100083, Peoples R China

[2] State Key Lab Transducer Technol, Shanghai 200050, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 10期

基金：

中国国家自然科学基金;

关键词：

MEMS packaging; Au-Sn solder; Sn-rich; bonding strength;

D O I：

10.1088/1674-4926/34/10/106001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sn-rich Au-Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au-Sn system makes a major contribution to the high bonding shear strength. The maximum shear strength of 64 MPa and a leak rate lower than 4.9 x 10(-7) atm-cc/s have been obtained for Au46Sn54 solder bonded at 310 degrees C. This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.

引用

页数：4

共 10 条

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