RF-SPUTTERED ALUMINUM NITRIDE FILMS ON SAPPHIRE

被引：103

作者：

SHUSKUS, AJ ^{[1
]}

REEDER, TM ^{[1
]}

PARADIS, EL ^{[1
]}

机构：

[1] UNITED AIRCRAFT CORP,RES LABS,E HARTFORD,CT 06108

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 04期

关键词：

D O I：

10.1063/1.1655132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：155 / 156

页数：2

共 11 条

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ULTRASONICS, 1970, 8 (04) :218-+

[2]

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[3]

Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

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[5]

HICKERNELL FS, 1973, J APPL PHYS, V44, P1061, DOI 10.1063/1.1662307

[6] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

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[7]

NORIEKA AJ, 1969, J VAC SCI TECHNOL, V6, P194

[8] ACOUSTIC SURFACE-WAVE PROPERTIES OF EPITAXIALLY GROWN ALUMINUM NITRIDE AND GALLIUM NITRIDE ON SAPPHIRE [J].

OCLOCK, GD ;

DUFFY, MT .

APPLIED PHYSICS LETTERS, 1973, 23 (02) :55-56

[9] AIN SWITCHABLE MEMORY RESISTOR CAPABLE OF A 20-MHZ CYCLING RATE AND 500-PICO-SECOND SWITCHING TIME [J].

RUTZ, RF ;

HARRIS, EP ;

CUOMO, JJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (01) :61-65

[10]

SMITH WR, 1969, IEEE T MICROWAVE THE, VMT17, P856

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