Fabrication of Si/SiO2 nanocomposite thin films

被引：6
|
作者：
Chang, ITH
Cantor, B
Leigh, PA
Dobson, PJ
机构：
[1] Oxford Centre for Advanced Materials and Composites, University of Oxford, Oxford, Parks Road
来源：
NANOSTRUCTURED MATERIALS | 1995年 / 6卷 / 5-8期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/0965-9773(95)00189-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si-rich SiO2 films were deposited onto Si and quartz substrates by rf co-sputtering, and then annealed under vacuum at temperatures between 500 to 900 degrees C for 1 hour. A combination of high resolution transmission electron microscopy, optical ellipsometry, and UV/VIS and FTIR photospectrometry were used to investigate the microstructures and optical properties of the co-sputtered films before and after annealing. The as-deposited films consisted of a fully amorphous SiOx(1<x<2) structure. After annealing, the films consisted of clusters of crystalline Si with average sizes in the range between 3nm and 8nm embedded in a stoichiometric SiO2 amorphous matrix.
引用
收藏
页码：835 / 838
页数：4
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