ON THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

LICEA, I

TOMOZEIU, N

机构：

[1] Department of Solid State Physics, Faculty of Physics, University of Bucharest, National Center of Physics, Bucharest

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 179卷 / 02期

关键词：

D O I：

10.1002/pssb.2221790224

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Some experimental data about the photoconductivity of n-type a-Si:H samples obtained by glow discharge technics are presented. The photoconductivity and the shape of the lux-ampere characteristics presenting two straight lines with variable slopes are explained in terms of electron trapping and recombination kinetics. A comparison between the experimental data and the corresponding expressions which result from the considered model is made.

引用

页码：513 / 520

页数：8

共 11 条

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