FOCUSED ION-BEAM INDUCED DEPOSITION IN THE HIGH-CURRENT DENSITY REGION

Focused ion beam induced deposition (FIB.ID) in a high current density region is investigated. High current density experiments are done with current densities of 1.3 A/cm2 and 8.6 A/cm2. A 30 kV Ga+ beam is line-scanned at various scanning speeds over a SiO2 substrate in a W(CO)6 gas environment. To analyze these results, a conventional model is improved by taking into consideration FIB scanning and impurity effects. The FIB.ID is simulated in a wide current density region using the improved model. It is found that shortening the dwell time is more effective than increasing the precursor gas flux for the high current density FIB.ID.