COMPARATIVE-STUDY OF TIME-RESOLVED CONDUCTIVITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON

被引：48
作者：
KUNST, M
WERNER, A
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期
关键词：
D O I：
10.1063/1.335940
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2236 / 2241
页数：6
相关论文
共 19 条
[1]  
DEHASS MP, 1982, CHEM PHYS, V13, P35
[2]   DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J].
FUHS, W ;
MILLEVILLE, M ;
STUKE, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :495-502
[3]   DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
HVAM, JM ;
BRODSKY, MH .
PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374
[4]  
JOANNPOULOS JD, 1984, TOPICS APPLIED PHYSI, V56, pCH5
[5]   TRANSIENT-PHOTOCURRENT STUDIES IN A-SI-H [J].
KIRBY, PB ;
PAUL, W .
PHYSICAL REVIEW B, 1984, 29 (02) :826-835
[6]   DISPERSIVE TRANSPORT AND TRAP SATURATION IN DOPED HYDROGENATED AMORPHOUS-SILICON [J].
KRISTENSEN, IK ;
HVAM, JM .
SOLID STATE COMMUNICATIONS, 1984, 50 (09) :845-848
[7]   CHARGE CARRIER DYNAMICS IN A-SI-H [J].
KUNST, M ;
WERNER, A .
SOLID STATE COMMUNICATIONS, 1985, 54 (01) :119-121
[8]  
KUNST M, UNPUB
[9]   CARRIER DIFFUSION IN AMORPHOUS-SEMICONDUCTORS [J].
MARSHALL, JM .
REPORTS ON PROGRESS IN PHYSICS, 1983, 46 (10) :1235-1282
[10]   STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING CORRELATED DEFECTS [J].
OKAMOTO, H ;
KIDA, H ;
HAMAKAWA, Y .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (03) :231-247
12