COMBINED EFFECT OF STRAINED-LAYER SUPERLATTICE AND ANNEALING IN DEFECTS REDUCTION IN GAAS GROWN ON SI SUBSTRATES

被引：37

作者：

ELMASRY, NA ^{[1
]}

TARN, JCL ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.101581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1442 / 1444

页数：3

共 11 条

[1] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J].

ELMASRY, N ;

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BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1608-1610

[2] INTERACTIONS OF DISLOCATIONS IN GAAS GROWN ON SI SUBSTRATES WITH INGAAS-GAASP STRAINED LAYERED SUPERLATTICES [J].

ELMASRY, NA ;

TARN, JC ;

KARAM, NH .

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[3]

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[4]

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[5] COMPARATIVE STUDIES OF DEFECTS IN GAAS ON SILICON SUBSTRATES USING ELECTRON-BEAM-INDUCED CURRENT AND TRANSMISSION ELECTRON-MICROSCOPY [J].

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TARN, JCL ;

ELMASRY, N ;

RADZIMSKI, ZJ .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3763-3765

[6]

JIAMG BL, 1988, APPL PHYS LETT, V52, P1258

[7]

MATHEWS JW, 1974, J CRYST GROWTH, V27, P118

[8] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J].

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AKIYAMA, M ;

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KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12) :L919-L921

[9] DEFECT REDUCTION IN GAAS EPITAXIAL LAYERS USING A GAASP-INGAAS STRAINED-LAYER SUPERLATTICE [J].

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :294-296

[10] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

MIKULYAK, RM ;

PINZONE, CJ ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :454-456

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