COMBINED EFFECT OF STRAINED-LAYER SUPERLATTICE AND ANNEALING IN DEFECTS REDUCTION IN GAAS GROWN ON SI SUBSTRATES

被引：37

作者：

ELMASRY, NA ^{[1
]}

TARN, JCL ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.101581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1442 / 1444

页数：3

共 11 条

[1] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES
ELMASRY, N
TARN, JCL
HUMPHREYS, TP
HAMAGUCHI, N
KARAM, NH
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610
[2] INTERACTIONS OF DISLOCATIONS IN GAAS GROWN ON SI SUBSTRATES WITH INGAAS-GAASP STRAINED LAYERED SUPERLATTICES
ELMASRY, NA
TARN, JC
KARAM, NH
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3672 - 3677
[3] ELMASRY NA, UNPUB
[4] FLETCHER RM, 1984, MATER RES SOC S P, V26, P417
[5] COMPARATIVE STUDIES OF DEFECTS IN GAAS ON SILICON SUBSTRATES USING ELECTRON-BEAM-INDUCED CURRENT AND TRANSMISSION ELECTRON-MICROSCOPY
HUMPHREYS, TP
HAMAGUCHI, N
BEDAIR, SM
TARN, JCL
ELMASRY, N
RADZIMSKI, ZJ
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3763 - 3765
[6] JIAMG BL, 1988, APPL PHYS LETT, V52, P1258
[7] MATHEWS JW, 1974, J CRYST GROWTH, V27, P118
[8] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE
NONAKA, T
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921
[9] DEFECT REDUCTION IN GAAS EPITAXIAL LAYERS USING A GAASP-INGAAS STRAINED-LAYER SUPERLATTICE
TISCHLER, MA
KATSUYAMA, T
ELMASRY, NA
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 294 - 296
[10] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
VANDERZIEL, JP
DUPUIS, RD
LOGAN, RA
MIKULYAK, RM
PINZONE, CJ
SAVAGE, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (08) : 454 - 456

← 1 2 →