EFFECTS OF ZINC DOPING OF THE ANTIMELTBACK LAYER ON 1.55-MU-M INGAASP/INP LASERS

被引:2
|
作者
FELDMAN, RD
HART, RM
ORON, M
LUM, RM
BALLMAN, AA
机构
关键词
D O I
10.1063/1.334718
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:723 / 726
页数:4
相关论文
共 50 条
  • [21] HIGH-SPEED, INGAASP/INP MULTIPLE QUANTUM-WELL, 1.55-MU-M SINGLEMODE MODULATOR
    DEVAUX, F
    BIGAN, E
    ROSE, B
    MCKEE, M
    HUET, F
    CARRE, M
    ELECTRONICS LETTERS, 1991, 27 (21) : 1926 - 1927
  • [22] High performance 1.3 mu m and 1.55 mu m InGaAsP/InP strained layer quantum well lasers grown by LP-MOCVD
    Ma, XY
    Wang, ST
    Xiong, FK
    Guo, L
    Wang, ZM
    Wang, LM
    Zhang, XY
    Sun, GX
    Xia, CH
    Zhu, T
    Yang, YL
    Zhang, HQ
    He, GP
    Yao, SQ
    Bi, KK
    Chen, LH
    INTEGRATED OPTOELECTRONICS, 1996, 2891 : 34 - 39
  • [23] DYNAMIC AND CW LINEWIDTH MEASUREMENTS OF 1.55-MU-M INGAAS INGAASP MULTIQUANTUM WELL DISTRIBUTED FEEDBACK LASERS
    WANG, SJ
    KETELSEN, LJP
    MCCRARY, VR
    TWU, Y
    NAPHOLTZ, SG
    WERNER, WV
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (11) : 775 - 777
  • [24] ROOM-TEMPERATURE CW OPERATION OF LAMBDA=1.55-MU-M INGAASP/INP ITG-DFB-BCRW LASERS WITH CONTACTED SURFACE GRATING
    RAST, A
    ZACH, A
    ELECTRONICS LETTERS, 1991, 27 (10) : 808 - 809
  • [25] SINGLE-QUANTUM-WELL STRAINED-LAYER INGAAS-INGAASP LASERS FOR THE WAVELENGTH RANGE FROM 1.43 TO 1.55-MU-M
    LIOU, KY
    DENTAI, AG
    BURROWS, EC
    JOYNER, CH
    BURRUS, CA
    RAYBON, G
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) : 311 - 313
  • [26] CHARACTERISTICS OF DIFFUSED-STRIPE INP-INGAASP-INP LASERS EMITTING AROUND 1.55 MU-M
    KAWAGUCHI, H
    TAKAHEI, K
    TOYOSHIMA, Y
    NAGAI, H
    IWANE, G
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (04) : 469 - 476
  • [27] High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 mu m wavelength
    Chen, TR
    Ungar, J
    Iannelli, J
    Oh, S
    Luong, H
    BarChaim, N
    ELECTRONICS LETTERS, 1996, 32 (10) : 898 - 898
  • [28] InGaAsP/InP 1.55-mu m lasers with chemically assisted ion beam-etched facets
    Daleiden, J
    Eisele, K
    Keller, R
    Vollrath, G
    Fiedler, F
    Ralston, JD
    OPTICAL AND QUANTUM ELECTRONICS, 1996, 28 (05) : 527 - 532
  • [29] EFFECTS OF ZN DOPING ON MODULATION BANDWIDTH OF 1.55 MU-M INGAAS INGAASP MULTIQUANTUM-WELL DFB LASERS
    LEALMAN, IF
    HARLOW, MJ
    PERRIN, SD
    ELECTRONICS LETTERS, 1993, 29 (13) : 1197 - 1198
  • [30] 1.55-MU-M HIGH-POWER LARGE OPTICAL CAVITY LASERS
    ZHONG, JC
    ZHU, BR
    LI, RH
    ZHAO, YJ
    PILLAI, R
    APPLIED PHYSICS LETTERS, 1991, 59 (24) : 3087 - 3089