BOUND EXCITON LIFETIMES FOR ACCEPTORS IN SI

被引：39

作者：

LYON, SA ^{[1
]}

OSBOURN, GC ^{[1
]}

SMITH, DL ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 07期

关键词：

D O I：

10.1016/0038-1098(77)91000-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：425 / 428

页数：4

共 9 条

[1] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].

DEAN, PJ ;

FLOOD, WF ;

KAMINSKY, G .

PHYSICAL REVIEW, 1967, 163 (03) :721-&

[2] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].

DEAN, PJ ;

FAULKNER, RA ;

KIMURA, S ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1971, 4 (06) :1926-&

[3] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[4] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J].

NELSON, DF ;

CUTHBERT, JD ;

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1966, 17 (25) :1262-&

[5]

OSBOURN GC, TO BE PUBLISHED

[6] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J].

SAUER, R ;

WEBER, J .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :48-51

[7] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J].

SAUER, R .

PHYSICAL REVIEW LETTERS, 1973, 31 (06) :376-379

[8]

SAUER R, 1974, 12TH P INT C PHYS SE, P42

[9]

VOUK MA, 1976, 13TH P INT C PHYS SE

← 1 →